Model XR-100CR is a high performance X-Ray Detector, Preamplifier, and Cooler system using a thermoelectrically cooled Si-PIN Photodiode as an X-Ray detector. Also mounted on the 2-stage cooler are the input FET and a novel feedback circuit. These components are kept at approximately -55°C, and are monitored by an internal temperature sensor. The hermetic TO-8 package of the detector has a light tight, vacuum tight thin Beryllium window to enable soft X-Ray detection.
Power to the XR-100CR is provided by the PX5 Digital Pulse Processor and Power Supply. The PX5 is DC powered by an AC adaptor and provides a variable Digital Pulse Processing Amplifier (0.200 μs to 100 μs peaking time), the MCA function, and all power supplies for the detector
The XR-100CR/PX5 systems ensures stable operation in less than one minute from power turn-on.
The resolution for the 5.9 keV peak of 55Fe is 145 eV FWHM to 230 eV FWHM depending on the detector type and shaping time constant (see next page for selection guide).
General | |
Detector Type | Si-PIN |
Detector Size | 6 mm2 to 25 mm2. See Selection Guide. |
Silicon Thickness | 300 μm and 500 μm |
Collimator | Multilayer |
Energy Resolution @ 5.9 keV, 55Fe | 145 eV FWHM to 230 eV FWHM depending on detector type and shaping time constant. See Selection Guide. |
Background counts | <3 x 10-3 /s, 2 keV to 150 keV for 7 mm2 / 300 μm detector |
Be Window | 1 mil (25 μm) or 0.5 mil (12.5 μm) thick |
Charge Sensitive Preamplifier | Amptek custom design with reset though the H.V. connection |
Gain Stability | <20 ppm/°C (typical) |
Case Size | 3.00 x 1.75 x 1.13 in (7.7 x 4.4 x 2.9 cm) |
Weight | 4.9 ounces (139 g) |
Total Power | <1 Watt |
Warranty Period | 1 year |
Typical Lifetime | 5 to 10 years, depending on use |
Storage Time | 10+ years in dry environment |
Operation Conditions | 0oC to +40oC |
Shipping and Storage | Long term storage: 10+ years in dry environment Typical Storage & Shipping: -20°C to +50°C, 10 to 90% humidity non condensing |
TUV Certification | Certificate #: CU 72072412 01 Tested to: UL 61010-1: 2004 R7 .05 CAN/CSA-C22.2 61010-1: 2004 |
Inputs | |
Preamp Power | ±8 to 9 V @ 15 mA with <50 mV peak-topeak noise. |
Detector Power | +100 to +200 V @ 1 μA depending on detector type; <0.1% variation. |
Cooler Power | Current = 350 mA maximum Voltage = 4 V maximum with <100 mV peak-to-peak noise Internal temperature controller |
Outputs | |
Reset Output Waveform The output of the XR100CR swings from +5 V to - 5 V. The reset period will vary with detector type and count rate. |
|
Preamplifier Sensitivity Polarity Feedback |
1 mV/keV typical (may vary for different detectors) Negative Signal Out, 1 kΩ max. load Reset through the detector capacitance |
Temperature Monitor Sensitivity | PX5: direct reading in K through software PX2CR: 770 mV = -50 °C |
Connectors | |
Preamp Output | BNC coaxial connector |
Power and Signal | 6-Pin LEMO connector |
Interconnect Cable | To PX5: 6-Pin LEMO to 6-Pin LEMO, 5 ft length To PX2CR: 6-Pin LEMO 9-Pin D, 5 ft length |
6-Pin LEMO Connector | |
Pin 1 | Temperature monitor diode |
Pin 2 | + H.V. Detector Bias, +100 - 200 V max. |
Pin 3 | -9 V Preamp Power |
Pin 4 | +9 V Preamp Power |
Pin 5 | Cooler Power Return |
Pin 6 | Cooler Power: 0 to +4 V @ 350 mA |
Case | Ground and Shield |
Options | |
Other Beryllium window thicknesses are available on special order (0.3 mil - 7.5 μm). | |
Accessories for vacuum applications. | |
See also XR-100SDD specifications using Silicon Drift Detectors. | |
See also XR-100T-CdTe specifications using Cadmium Telluride (CdTe) diode detectors for high efficiency and high resolution Gamma Ray detection (<1 keV FWHM @ 122 keV, 57Co). |
Detector Type Area/Thickness Be Window Thickness Options | Guaranteed Energy Resolution eV FWHM @ 5.9 keV* Peak to Background Ratio** |
The following detectors are fully depleted and contain a Multilayer (ML) Internal Collimator. | |
Si-PIN 6mm2 / 500 mm 0.5 or 1.0 mil Be |
145 - 165 eV 32 μs Peaking Time P/B Ratio: 6200/1 |
Si-PIN 13 mm2 / 500 mm 1.0 mil Be |
180 - 205 eV 32 μs Peaking Time P/B Ratio: 4100/1 |
Si-PIN 25 mm2 / 500 mm 1.0 mil Be |
190 - 225 eV 32 μs Peaking Time P/B Ratio: 2000/1 |
Super SDD 25 mm2 / 500 mm 0.5 mil Be |
125 - 140 eV 11.2 μs Peaking Time P/B Ratio: 8200/1 |
*Peaking Time is approximately 2.4x shaping time **The Peak to Background (P/B) Ratio is the ratio of the counts at the 5.9 keV to 2 keV. |
Figure 1.Chromium (Cr), Lead (Pb), and Cadmium (Cd).
Figure 2.X-123 X-Ray Spectrometer and OEM configurations.
Figure 3.XR-100CR Taking an X-Ray Fluorescence Spectrum of Michelangelo’s David
Figure 4.SS316 Fluorescence from 109Cd
Figure 5.Lead (Pb) Fluorescence from 109Cd
Figure 6.Process Control. Galvanized Steel: Zinc (Zn) plating on Iron (Fe)
Figure 7. 241Am Spectrum
Figure 8. Saint Gaudens US $20 gold coin with 90% Gold (Au) and 10% Copper (Cu).
Figure 9. Multi-Element Fluorescence from 109Cd from 109Cd
Figure 10. Low Element Fluorescence with 6 mm2/500 mm Detector
Figure 11. First Rock Spectrum from Mars
Figure 12. Jewelry analysis of a 14k Gold/White Gold (Au) chain containing Copper (Cu) and Nickel (Ni).
Figure 13. Complete XRF System: XR-100CR, PX5 Digital Pulse Processor and MCA, Mini-X X-Ray Generator System, and XRF-FP Quantitative Analysis Software (not shown)
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